Semiconductor technology: Kinetics of pulsed laser annealing
نویسندگان
چکیده
منابع مشابه
Dense-plasma Dynamics during Pulsed Laser Annealing
The flow of energy from the laser to the lattice during pulsed laser annealing of Si is examined, with particular attention paid to the influence of the dense'plasma of hot, photoexcited carriers on-the manner in which this energy transfer occurs. Consideration of carrier thermalization and recombination at high carrier densities suggests that under certain conditions carrier diffusion may incr...
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Thin metal fiIrns (Cu, Au, Ni) on quartz glass were illuminated with nanosecond pulse.; of a frequency doubled Nd:YAG laser (A = 532 nm). The transient reflectivity behavlour was probed at the wavelength 633 nm, where these metals exhibit Drude-Iike optical behaviour: the reflectivity decreases with temperature in the solid and in the Iiquid state as well as at the solid-llquid phase transition...
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An analysis of extended defects generated during annealing by pulsed excimer laser radiation in silicon crystals implanted with Ge ions is presented. The investigation was performed by means of two complementary methods: the interference-polarizing microscopy and the Lang X-ray transmission topography. The existence of extended defects was revealed. It has been stated that the distribution of t...
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Pulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL) spectra: first, the efficiency of the exciton PL increases due to decrease of the number of non-radiative recombination centers; second, the intensity of the def...
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ژورنال
عنوان ژورنال: Nature
سال: 1985
ISSN: 0028-0836,1476-4687
DOI: 10.1038/313100a0